| PART |
Description |
Maker |
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT1608-SEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT1208-SEA IPT1208-CEA IPT1208-BEA IPT1208-TEA |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| IR900 |
Reflects near IR heat with minimal reduction of visible light transmission
|
3M Electronics
|
| SPGN0365A SPGP0365A |
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
|
SemiHow Co.,Ltd.
|
| EURO-4 |
Isobar Surge Suppressor - Premium surge, spike and line noise protection
|
List of Unclassifed Manufac...
|
| ISOBAR4220 |
Isobar Surge Suppressor - Premium surge, spike and line noise protection
|
List of Unclassifed Man...
|
| IXA27IF1200HJ |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| BU4069F BU4069FV BU4069UB-E2 BU4069UBF-E2 BU4069UB |
4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDSO14
High Voltage CMOS Logic ICs
High Voltage CMOS Logic ICs Gate
|
http://
Rohm
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
